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cpp vaporized barrier film production line

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There are two major types of preparation methods for evaporated silicon oxide-based barrier packaging films: physical vapor deposition (PVC) and chemical vapor deposition (CVC). Depending on the specific implementation method, there are various methods as follows. Barrier film production equipment

1. Physical vapor deposition
Physical vapor deposition is also called physical vapor deposition method, including resistive evaporation, electron beam evaporation and sputtering. Among them, resistive evaporation and electron beam evaporation need to vaporize SiO2 at high temperature, while sputtering deposition applies single-element target sputtering, which has the advantages of low deposition temperature, high deposition rate, unlimited target material, and good coating quality.
Advantages.

(1) Resistance wire evaporation plating method

Resistance wire evaporation plating method is in a vacuum chamber, with a resistance wire heated SiO2, temperature up to 1700 ℃, high temperature and vacuum so that SiO2 in the form of atoms or molecules from the surface of the vaporization of the escape, the formation of a vapor stream, the vapor stream in the substrate surface deposition, the formation of barrier packaging film containing SiOx coating.



(2) Electron beam evaporation coating method

E-beam evaporation coating method is put SiO2 into the water-cooled copper crucible, the direct use of electron beam heating, so that the evaporation vaporization, and then condensed on the surface of the substrate to form a barrier packaging film containing SiOx coating. E-beam bombardment of the heat source of the beam density is high, can be far greater than the resistance heating source of energy density, evaporation temperature is high (e-beam heating energy of up to 20kW / c ㎡, the temperature can be up to 3,000 ~ 6,000 ° C), and therefore particularly suitable for the production of high melting point film materials and high-purity film materials, and can have a higher rate of evaporation. As heat can be added directly to the surface of the vaporized material, thus high thermal efficiency, heat conduction and heat radiation loss is less, the production of SiOx barrier packaging film barrier, compared with the resistance wire evaporation method of production of products, there is a significant improvement.

(3) Sputtering method

Sputtering method is also known as magnetron sputtering method or high-speed low-temperature sputtering method. Sputtering with a single element target and pouring into the reaction gas for the reaction is called reaction sputtering, by adjusting the deposition process parameters, you can prepare chemically proportional or non-chemically proportional compounds thin film, so as to achieve the purpose of adjusting the composition of the thin film coating to adjust the characteristics of the film. Compared with the evaporation method, magnetron sputtering has the advantages of strong bonding between the coating layer and the substrate, and a dense, uniform coating layer. Other advantages of magnetron sputtering are simple equipment, easy operation, etc. In the sputtering process, as long as the working air pressure and sputtering power are kept constant, basically a stable deposition rate can be obtained. The biggest disadvantage is that the deposition rate is relatively low, in addition to the possible target poisoning, caused by the flaming and sputtering process is not stable, as well as film defects, etc., which limits its application, so there is still to be further improved.

2. Chemical vapor deposition (PECVD)
Chemical vapor deposition, also known as plasma-enhanced chemical vapor deposition or plasma polymerization vapor deposition, is the use of plasma means to generate electrons, ions and active groups, in the gaseous state or the surface of the substrate to carry out chemical reactions. Plasma enhanced chemical vapor deposition technology, the use of radio frequency (RF) power supply to generate glow discharge (RF power discharge can be set to continuous discharge mode or pulse discharge mode) or microwave (MW) discharge to dissociate the reactive gases, the formation of plasma, plasma and the surface of the substrate film to interact with the surface and deposition of the film. Gu Jihai and others had been in the packaging engineering, the principle, characteristics and application of PECVD vapor deposition technology and the development trend of ceramic film vapor deposition technology.

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